Rakon’s Ultra Stable Quartz Crystal Oscillator for Space Applications achieves the best performance by any space USO globally.
The new oscillator achieved a performance of 5.10-14/°C. This is a great development prior to Rakon beginning the next stage of downsizing the USO structure.
Designed for applications demanding the highest speed and highest dynamic performance in a small space, the ADS5500-EP has excellent power consumption of 780 mW at 3.3-V single-supply voltage. This allows an even higher system integration density. The provided internal reference simplifies system design requirements. A parallel CMOS-compatible output ensures seamless interfacing with common logic.
Due to their increased frequency capability and ultra-low RDS(ON), eGaN FETs and integrated circuits increase the performance of applications using standard silicon MOSFETs and enable applications that were not achievable with silicon technology. GaN devices save space, improve efficiency, increase manufacturing efficiencies, and lower system costs.
This new panel series includes a variety of universal sub-panels with TRB and TRT feed-through jacks and options that include 12” leads on the back of the panels. Custom length leads are also available upon request. These universal sub-panels are designed to fit into MilesTek’s 6-bay universal master rack panel which can house a wide variety of interconnect options.
Additionally, MilesTek now stocks both 1U and 2U, TRB and TRT patch panels designed to fit into 19” equipment racks and enclosures. These new patch panels feature .06” cold rolled steel and are RoHS compliant.
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Built of high-quality DDR4 chips and extra-durable components, Transcend’s Industrial Grade DDR4-2400 SO-DIMM is an ideal choice for space-constrained applications that require rugged durability and flawless stable operation even in extreme heat or cold environments. Rugged notebooks, POS terminals, indoor/outdoor kiosks and vending machines, medical equipment, and other industrial systems will benefit from the robust durability of Transcend’s Industrial Grade memory modules, which are built with PCB contact pins that are 10 times thicker than normal. With industrial range (-40° to 85ºC) operating temperature flexibility, these memory modules are specially engineered to maintain optimum performance.
Vishay Intertechnology has expanded its range of surface-mount TMBS Trench MOS Barrier Schottky rectifiers with 15 new 1A, 2A, and 3A devices in the eSMP series low profile SMF package. Affording space-saving alternatives to Schottky rectifiers in the SMA, these devices highlight reverse voltages from 45V to 150V, while their 3A rating is the industry’s highest for the SMF package.
Currently, Schottky rectifiers with current ratings to 3A are typically available in the SMA package. The devices released increase power density by offering this high forward current in the smaller SMF. Measuring 3.7mm x 1.8mm with a low 0.98mm profile, the package is 46% thinner than the SMA and uses 49% less board space.
The new rectifiers provide a maximum operating junction temperature up to +175C and an MSL moisture sensitivity level of 1, per J-STD-020, LF maximum peak of +260C. Ideal for automated placement, the devices are RoHS-compliant and halogen-free.
These high frequency coaxial/surface mount PCB connectors are highly reliable solderless connectors for precision thin substrate mounting.
Spirit Electronics now offers SV Microwave’s wide range of IP 68 water-protected interconnect products designed to withstand rigorous environments and harsh elements. SV’s line of waterproof connectors include hermetically-sealed connectors to the 1 x 10-8, making them ideal for high pressure, vacuum applications and the prevention of liquid or gas leakeage. Ingress Protection ratings are used to specify the environmental protection of enclosures and casings around electronic products.
Common applications of these products include:
Do you need Wafer Lot Acceptance to Mil-Std-883, Method 2018? This post explores the purpose and importance of this standard when performing electronics failure analysis.
MIL-STD-883 is US military test standard for testing microelectronic devices. The objective of MIL-STD-883 is to identify devices suitable for use within military and aerospace electronic systems that withstand the harmful effects of natural elements and conditions.
The Mil-Std- 883, Method 2018 specifies sampling procedures for die selected from the wafers or die already packaged. In this post, we dive into the purpose and processes required by this standard.
Scanning Electron Microscope (SEM) Inspections are defined in Mil-Std-883, Method 2018, and form part of a Wafer Lot Acceptance (WLA) plan. The purpose of this standard is to ensure metallization layers in the integrated circuit (IC) do not suffer from systemic processing problems.
Although WLA is not typically cited for industrial environments, the mission-critical components in the military and aerospace marketplaces for Method 2018 are commonplace as a requirement for integrated circuit wafers and die.
One purpose of Method 2018 is to ensure a wafer processing lot has metal layers that are at least 50% of their designed cross-sectional area for current densities.
Metal layers processed on a planar technology are typically not a concern; however, in non-planarized processes, the oxide steps can result in thinning of the metal and therefore decrease the cross-sectional areas.
These metal step coverage concerns can result in failures if the cross-sectional areas are too thin for the designed current density criteria required by Mil-PRF-38535 and lead to localized current hot spots that could result in blown metal lines or long-term failures from electromigration.
Method 2018 is focused on characteristics of the metal layers that are evaluated across the wafer lot, and not random defects, such as scratches, smeared metal, etc.
Statistically, a very large sample size would be required to validate a particular wafer lot. The Mil-Std- 883, Method 2018 specifies sampling procedures for die selected from the wafers or die already packaged. A sampling of 8 dies is required if there is wafer lot traceability or 22 samples of a population of devices that do not have traceability back to the wafer lot.
The metal inspection can begin, once the samples have been selected. Typically samples are pulled from completed wafer lots, although Mil-Std- 883, Method 2018 does provide some guidelines for pulling samples before final glassivation.
Assuming the samples are from completed wafers, the top glassivation layer will need to be removed before the metal lines can be SEM inspected. The maximum SEM magnification required by Method 2018 is 50,000x, with an SEM resolution of 250 angstroms or less. For the SEM inspection, the use of a conductive coating on the specimen is discouraged. Thankfully, a good Field Emission SEM (FE-SEM) easily meets all these requirements.
The next layer of metallization will need to be uncovered and inspected after the top layer metallization has been inspected. The top metal and the glassivation layer beneath the top metallization must be removed to inspect the next layer of metallization. This selective deprocessing should not disturb the underlying metal layer to allow the inspection of the next metal layer.
This process is repeated for each metal layer, meticulously removing the top metal layer and oxide to get to the next metal layer without causing any damage. It is possible, using dry etch techniques, to expose multiple metal layers at a time; this is allowed under the regulations of Method 2018 and can increase the efficiency of the inspection process, saving time and money.
Another requirement of Mil-Std-883, Method 2018 is the performance of a cross-section of the sample, either by lapping or cleaving. This additional step is performed at areas of interest, based upon the top view examination already performed, to allow an accurate measurement of the metallization thickness on a planar region, the metallization thickness over the step coverage, and a view of any suspect structures or process artifacts (but still not random defects). Obviously, cross-sections in the x- and y-planes are the minimum needed, and on occasion, a customer may also provide areas of interest (based upon their knowledge of a specific structure that might be unique).
The SEM inspection itself is straightforward, but the deprocessing of each metal layer and oxide to the next metal requires a lab with considerable experience in this area of expertise. Most non-planar processes only have three levels of metal or less, however, the irregularities in the metal heights (mountains and valleys if you will) can be considerable.
To perform a proper inspection, it may be necessary to etch the glassivation layer in the valley to expose the metal therein, while leaving the metal atop the “mountain” intact. Although the latest version of Method 2018 does not require inspection of planarized processes, there are some IC users who still require this inspection. In these cases, there can be upwards of 8 layers of metal to be inspected and subsequently removed.
Furthermore, the mainstream wafer processes are now including some or all copper metallization in IC manufacturing. The process of removing copper metallization is much different than that of aluminum, and if there is a subsequent layer of aluminum under the copper layer, the deprocessing also needs to take that under consideration.
Any misprocessing when removing the metal and glass layer will be compounded by the ensuing deprocessing steps, potentially rendering the sample useless for the examination of the lower metallization levels. Method 2018 foresaw such issues and allows the sampling of a second die (adjacent to the first one sampled) as a replacement).
It is still necessary, though, to deprocess the top levels of metal to resume the inspection of the lower levels. This can be a very costly process if too many mistakes are made, or for some labs, not even feasible. Obviously, each time a sample has to be started over, there will be a delay in the time to finishing the inspection and hence a delay in releasing the wafer lot for production.
While no electronic failure analysis lab will deprocess every die perfectly, it is obviously desirable to select a lab with a successful track record, one that will minimize costs and time delays. As such, the selection of the lab to perform the SEM inspection should focus on reputable labs with the experience, knowledge, and capability to meet your needs.
Mil-Std-883, Method 2018 specifies the requirements for the SEM Inspection of metallization layers of integrated circuits. It is a very complete document detailing how to prepare for and inspect the metallization layers in order to accept a wafer lot. One of the key ingredients is working with a failure analysis laboratory that you know has the appropriate equipment, technical know-how, and experience in deprocessing and inspecting to this standard.
A failure analysis lab employs a wide variety of techniques to search for defects in integrated circuits. Last week, we had seen what goes on inside a failure analysis lab and today we’ll take a look at the different types of printed circuits defects and what class of methods are used to analyze them. It should be noted that any printed circuits defects analysis is preceded by a thorough examination of the facts accompanying the detection of the failure and only after the engineers know what they’re looking for, do they settle down to apply specific failure analysis techniques.
There are three types of broad defects which can occur in printed circuit boards. Physical disruptions in the material, flaws in the makeup of the material and electrical construction problems. Each of these requires a different approach in detection and shows different symptoms which can be uncovered by analyzing the circumstances surrounding the failure.
Physical disruptions in the material are the most obvious. Not that they’re easy to detect, but they’re easiest for a layman to understand. They occur when the integrity of the chip breaks down in some places. Fatigue cracks and corrosion are two examples of this type of breakdown. Frequently, the defects are tiny and can’t be seen without assistive technologies.
Dye penetrant testing is an excellent way to detect these failures. The chip is stained with a coloring material that reveals cracks and faults. The specific characteristics of these faults give engineers a clue as to what type of fault it is.
The second type of flaw is one which deals with the purity of the materials. Semiconductor materials are manufactured to very precise specifications with just the correct amount of trace minerals necessary for certain properties. Deviations from this will cause the chip to behave in unexpected ways. Since the deviations can be tiny, precise measurements using various emission techniques are used to determine the extent of the flaws.
The third type of flaw deals with the many electrical faults that can occur on the millions of connections on any given chip. It’s remarkably difficult to detect these flaws, but one of the starting points is to figure out which portion of the chip is overheating. Fluorescent imaging, as well as liquid crystal imaging, can be used to find out where the heat is being generated, though this doesn’t automatically mean that the flaw is present in that area as it could occur somewhere “up river.”
Printed circuits defects require a thorough understanding of how chips work. It’s an exact science as well as an art – and one in which new methods are constantly being innovated.